| US 7,518,199 B2 | ||
| Insulating film containing an additive element and semiconductor device | ||
| Tatsuo Shimizu, Tokyo (Japan); and Takeshi Yamaguchi, Tokyo (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Dec. 28, 2005, as Appl. No. 11/318,622. | ||
| Claims priority of application No. 2005-018482 (JP), filed on Jan. 26, 2005. | ||
| Prior Publication US 2006/0163676 A1, Jul. 27, 2006 | ||
| Int. Cl. H01L 27/088 (2006.01) | ||
| U.S. Cl. 257—411 [257/E29.015] | 12 Claims |
| 1. An insulating film comprising an oxide or an oxynitride of a constituent element having a positive valence, the oxide or the oxynitride containing an additive element having a larger valence than the constituent element in a range not less than 3×10−8 at % and less than 1.6×10−3 at %. |