| US 7,518,197 B2 | ||
| Power semiconductor device | ||
| Masakazu Yamaguchi, Kawasaki (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan); and Toyota Jidosha Kabushiki Kaisha, Toyota-Shi (Japan) | ||
| Filed on May 22, 2006, as Appl. No. 11/437,657. | ||
| Claims priority of application No. 2005-149840 (JP), filed on May 23, 2005. | ||
| Prior Publication US 2006/0278925 A1, Dec. 14, 2006 | ||
| Int. Cl. H01L 27/088 (2006.01) | ||
| U.S. Cl. 257—401 [257/329; 257/341; 257/330; 257/492; 257/262] | 28 Claims |
| 1. A power semiconductor device performing a bipolar operation comprising:
a first base layer of first conductivity type;
a first contact layer of first conductivity type formed on a surface of the first base layer;
a second base layer of first conductivity type which is formed on the surface of the first base layer at a side opposite to
the first contact layer and has an impurity concentration higher than that of the first base layer;
a second contact layer of second conductivity type formed on the surface of the second base layer, the second contact layer
forming a pn junction with the second base layer in a depth direction of the first base layer;
a junction termination region formed in vicinity of or in contact with outside in a horizontal direction of the second contact
layer;
a cathode electrode formed directly on a surface of the first contact layer; and
an anode electrode formed directly on a surface of the second contact layer.
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