| US 7,518,168 B2 | ||
| MOS type solid-state image pickup device and driving method comprised of a photodiode, a detection portion, and a transfer transistor | ||
| Keiji Mabuchi, Kanagawa (Japan); and Takahisa Ueno, Kanagawa (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Jul. 11, 2007, as Appl. No. 11/776,293. | ||
| Application 11/776293 is a continuation of application No. 10/046402, filed on Jan. 14, 2002, granted, now 7,259,790. | ||
| Claims priority of application No. P2001-006657 (JP), filed on Jan. 15, 2001. | ||
| Prior Publication US 2007/0278533 A1, Dec. 06, 2007 | ||
| Int. Cl. H01L 27/148 (2006.01) | ||
| U.S. Cl. 257—230 [257/223; 257/233; 257/292; 257/E27.132; 257/E27.162] | 3 Claims |
| 1. A solid-state image pickup device including:
a plurality of pixels each comprising (1) a photodiode, (2) a detection portion and (3) a transfer transistor for transferring
charges accumulated in said photodiode to said detection portion,
wherein,
an overflow path for discharging charges overflowing from said photodiode is formed in a bulk out of a channel portion of
said transfer transistor and discharges the charges in a depth direction of a substrate,
said overflow path is formed of a first conductive type semiconductor region formed on the surface of a n-type semiconductor
region in an area extending from the portion just below said photodiode to a semiconductor substrate, and
said area is formed of the second conductive type semiconductor region having an impurity concentration lower than that of
a semiconductor well region or the p-type semiconductor region.
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