US 7,518,163 B2
	Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof
Koji Kamei, Ichihara (Japan)
Assigned to Showa Denko K.K., Tokyo (Japan)
Appl. No. 10/582,913 PCT Filed Dec. 16, 2004, PCT No. PCT/JP2004/019284 § 371(c)(1), (2), (4) Date Jun. 14, 2006, PCT Pub. No. WO2005/059982, PCT Pub. Date Jun. 30, 2005.
Claims priority of provisional application 60/532722, filed on Dec. 29, 2003.
Claims priority of application No. 2003-419336 (JP), filed on Dec. 17, 2003.
Prior Publication US 2007/0096126 A1, May 03, 2007
Int. Cl. H01L 27/15 (2006.01)

U.S. Cl. 257—103  [257/79; 257/189; 257/11; 257/E33.025]

22 Claims

1. A gallium nitride-based compound semiconductor light-emitting device comprising an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting layer of a gallium nitride-based compound semiconductor and a p-type semiconductor layer of a gallium nitride-based compound semiconductor formed on a substrate in this order, and having a negative electrode and a positive electrode provided on the n-type semiconductor layer and the p-type semiconductor layer, respectively; wherein the negative electrode comprises a bonding pad layer, a contact metal layer which is in contact with the n-type semiconductor layer, and an Au—Sn alloy layer or a lead free solder layer which is provided on the bonding pad layer, and wherein the contact metal layer is composed of a Cr—Al alloy which has a Cr content of 20 to 80 mass %.