| US 7,518,149 B2 | ||
| Light emitting mesa structures with high aspect ratio and near-parabolic sidewalls | ||
| Pleun Pieter Maaskant, Cork (Ireland); Edmund Anthony O'Carroll, Cork (Ireland); Paul Martin Lambkin, Cork (Ireland); and Brian Corbett, Cork (Ireland) | ||
| Assigned to University College Cork - National University of Ireland, Cork, Cork (Ireland) | ||
| Filed on Oct. 28, 2005, as Appl. No. 11/264,341. | ||
| Application 11/264341 is a continuation of application No. PCT/IE2004/000063, filed on May 04, 2004. | ||
| Claims priority of application No. 2003/0332 (IE), filed on May 02, 2003. | ||
| Prior Publication US 2006/0113638 A1, Jun. 01, 2006 | ||
| Int. Cl. H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2006.01) | ||
| U.S. Cl. 257—79 [257/95; 257/E33.001] | 20 Claims |
| 1. An optical device comprising
a semiconductor diode having an active layer enclosed in a semiconductor structure mesa, in which:
the mesa has a truncated top, on a side opposed to a light transmitting or receiving face;
the mesa has an aspect ratio ((H3)×(H3)/Ac) greater than 0.5, in which Ac is the cross-sectional area of the mesa at the level of the active layer and H3 is a height of the mesa; and
side walls of the mesa intersect the active layer at an angle α=45° (+/−20°) along a substantial part of a perimeter of the
active layer, the mesa having a near-parabolic shape to form a reflective enclosure for light generated or detected within
the device.
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