| US 7,518,118 B2 | ||
| Depth sensing in CdZnTe pixel detectors | ||
| Fiona A. Harrison, Los Angeles, Calif. (US); and Walter Cook, Long Beach, Calif. (US) | ||
| Assigned to California Institute of Technology, Pasadena, Calif. (US) | ||
| Filed on Feb. 26, 2008, as Appl. No. 12/37,889. | ||
| Claims priority of provisional application 60/903807, filed on Feb. 27, 2007. | ||
| Prior Publication US 2008/0203313 A1, Aug. 28, 2008 | ||
| Int. Cl. G01T 1/24 (2006.01) | ||
| U.S. Cl. 250—371 [250/370.1] | 8 Claims |
| 1. A method for measuring interaction depth of photons in CdZnTe pixel detectors comprising:
providing a CdZnTe pixel detector;
connecting a side of the CdZnTe pixel detector to an application specific integrated circuit (ASIC);
configuring the ASIC for measuring both positive polarity and negative polarity signal amplitudes;
applying a bias on the CdZnTe pixel detector such that a segmented contact of the CdZnTe pixel detector collects electrons;
upon interactions of photons in the CdZnTe pixel detector, measuring, through the ASIC, a core pixel having positive signal
amplitude and hallow pixels having negative signal amplitude and surrounding the core pixel; and
calculating a ratio of a sum of the positive signal amplitudes of the hallow pixels to the negative signal amplitude of the
core pixel, thus measuring the interaction depth of the photons.
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