US 7,517,809 B2
	Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
Michael B. Korzenski, Danbury, Conn. (US); Thomas H. Baum, New Fairfield, Conn. (US); Chongying Xu, New Milford, Conn. (US); and Eliodor G. Ghenciu, King of Prussia, Pa. (US)
Assigned to Advanced Technology Materials, Inc., Danbury, Conn. (US)
Filed on Jan. 08, 2007, as Appl. No. 11/620,902.
Application 11/620902 is a continuation of application No. 10/782355, filed on Feb. 19, 2004, granted, now 7,160,815.
Application 10/782355 is a continuation in part of application No. 10/724791, filed on Dec. 01, 2003.
Prior Publication US 2007/0111533 A1, May 17, 2007
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/302 (2006.01); H01L 21/461 (2006.01)

U.S. Cl. 438—745  [438/753; 438/756; 438/757]

18 Claims

1. A method of removing silicon-containing substances from a substrate having same thereon, said method comprising contacting the substrate with a composition for dehydrating the substrate, and contacting the dehydrated substrate with a supercritical fluid (SCF)-based composition comprising a SCF, at least one co-solvent, and at least one etchant species, for sufficient time and under sufficient contacting conditions to remove silicon-containing substances from the substrate.