| US 7,517,782 B2 | ||
| Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phase | ||
| Axel Preusse, Radebeul (Germany); Susanne Wehner, Dresden (Germany); and Markus Nopper, Dresden (Germany) | ||
| Assigned to Advanced Micro Devices, Inc., Austin, Tex. (US) | ||
| Filed on Sep. 28, 2006, as Appl. No. 11/536,041. | ||
| Claims priority of application No. 10 2005 063 093 (DE), filed on Dec. 30, 2005; and application No. 10 2006 001 253 (DE), filed on Jan. 10, 2006. | ||
| Prior Publication US 2007/0166982 A1, Jul. 19, 2007 | ||
| Int. Cl. H01L 21/20 (2006.01) | ||
| U.S. Cl. 438—597 [438/641; 438/643; 438/644; 438/677; 438/678; 257/E21.174; 257/E21.585; 257/E21.586] | 26 Claims |
| 1. A method, comprising:
depositing a first portion of metal over a patterned layer of a semiconductor device by applying an electrolyte solution and
performing an electroless wet chemical deposition process; and
establishing an externally generated electric field in said electrolyte solution while applying said electrolyte solution
to further deposit a second portion of said metal by an electroplating deposition process.
|