| US 7,517,780 B2 | ||
| Method for eliminating polycide voids through nitrogen implantation | ||
| Ling-Wuu Yang, Hsinchu (Taiwan); Kuang-Chao Chen, Hsinchu County (Taiwan); and Tuung Luoh, Taipei (Taiwan) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on Jan. 28, 2005, as Appl. No. 11/44,212. | ||
| Prior Publication US 2006/0172519 A1, Aug. 03, 2006 | ||
| Int. Cl. H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—592 [257/E21.199; 438/683] | 9 Claims |
| 1. A method of manufacturing a semiconductor device, comprising:
providing a first layer over a wafer substrate;
providing a polysilicon layer over the first layer;
implanting nitrogen ions into the polysilicon layer; at a location near a top surface of the polysilicon layer to retard the
growth of the grain size at a subsequent annealing step, wherein a dose of the nitrogen ions is 1E14˜5E14;
forming a polycide layer over the polysilicon layer, wherein the step of forming a polycide layer comprises depositing a metal
layer over the polysilicon layer and annealing the polysilicon layer; and
forming source and drain regions.
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