| US 7,517,554 B2 | ||
| Process for producing nanostructure of mixed film of Al, Si, and/or Ge | ||
| Tatsuya Saito, Ebina (Japan); Tohru Den, Tokyo (Japan); Kazuhiko Fukutani, Santa Cruz, Calif. (US); and Aya Imada, Yokohama (Japan) | ||
| Assigned to Canon Kabushiki Kaisha, Tokyo (Japan) | ||
| Filed on Jan. 26, 2006, as Appl. No. 11/339,627. | ||
| Application 11/339627 is a continuation of application No. PCT/JP2004/011647, filed on Aug. 06, 2004. | ||
| Prior Publication US 2006/0127602 A1, Jun. 15, 2006 | ||
| Int. Cl. C23C 8/00 (2006.01) | ||
| U.S. Cl. 427—126.1 [427/255.35; 427/585; 204/192.1] | 9 Claims |
| 1. A process for producing a nano-structure which is comprised of a matrix comprised of silicon, germanium, or silicon-germanium and cylindrical portions comprised of aluminum not larger than 30 nm in diameter and having the longitudinal direction perpendicular to a substrate, the process comprising the step of forming a mixed film of Alx(SiyGe1-y)1-x (0.3≤X≤0.8, 0≤Y≤1) on the substrate by using aluminum and silicon, aluminum and germanium, or aluminum, silicon and germanium as the source materials, at a film-forming rate of not higher than 150 nm/min. |