| US 7,517,466 B2 | ||
| Method for manufacturing porous structure and method for forming pattern | ||
| Koji Asakawa, Kawasaki (Japan); Toshiro Hiraoka, Yokohama (Japan); Yoshihiro Akasaka, Kawasaki (Japan); and Yasuyuki Hotta, Funabashi (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Kawasaki-shi (Japan) | ||
| Filed on Jun. 20, 2006, as Appl. No. 11/455,916. | ||
| Application 11/455916 is a division of application No. 10/347956, filed on Jan. 22, 2003, granted, now 7,090,784. | ||
| Application 10/347956 is a division of application No. 09/588721, filed on Jun. 07, 2000, granted, now 6,565,763. | ||
| Claims priority of application No. 11-159479 (JP), filed on Jun. 07, 1999; application No. 11-262326 (JP), filed on Sep. 16, 1999; and application No. 2000-169263 (JP), filed on Jun. 06, 2000. | ||
| Prior Publication US 2006/0231525 A1, Oct. 19, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. C08J 9/26 (2006.01) | ||
| U.S. Cl. 216—41 [216/49; 216/56; 521/61; 438/945; 438/947] | 3 Claims |
| 1. A method for forming a pattern comprising:
on a substrate, forming a film comprised of a pattern forming material; wherein the pattern forming material comprises a block
copolymer or graft copolymer comprising;
a polymer chain selected from the group consisting of a polyacrylonitrile chain, a polyacrylonitrile derivative chain, a polycyclohexadiene
derivative chain, a polybutadiene chain, a polysilane chain, polysiloxane chain, a polyamic acid chain and a polyaniline derivative
chain; and
a thermally decomposable polymer chain;
forming a microphase-separated structure in the film, the microphase-separated structure comprising a thermally decomposable
polymer phase and a remaining polymer phase;
removing the thermally decomposable polymer phase from the microphase-separated structure by heating said film to a thermal
decomposition temperature or more, to form a pattern of the microphase-separated structure; and
transferring the pattern of the microphase-separated structure to the substrate by etching the substrate using the remaining
polymer phase in the film as a mask.
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