| US 7,517,438 B2 | ||
| Magnetic recording disk, magnetic recording disk manufacturing method and magnetic recording disk manufacturing system | ||
| Masahiro Shibamoto, Kanagawa (Japan); Sinji Furukawa, Tokyo (Japan); Tetsuya Endoh, Tokyo (Japan); Miho Sakai, Tokyo (Japan); and Naoki Watanabe, Tokyo (Japan) | ||
| Assigned to Canon Anelva Corporation, Tokyo (Japan) | ||
| Filed on Apr. 25, 2005, as Appl. No. 11/113,630. | ||
| Application 11/113630 is a division of application No. 10/090350, filed on Mar. 04, 2002, granted, now 7,115,191. | ||
| Claims priority of application No. 2001-60979 (JP), filed on Mar. 05, 2001. | ||
| Prior Publication US 2005/0214589 A1, Sep. 29, 2005 | ||
| Int. Cl. C23C 14/34 (2006.01) | ||
| U.S. Cl. 204—298.25 [204/298.11; 204/298.23] | 19 Claims |
| 1. A system for manufacturing a magnetic recording disk, comprising:
a magnetic-recording-layer preparation chamber in which a magnetic recording layer is prepared on a substrate;
an anisotropy-allowing layer preparation chamber in which an anisotropy-allowing layer to allow magnetic anisotropy to the
magnetic recording layer is prepared on the substrate by sputtering prior to preparation of the magnetic recording layer,
as a relatively larger number of sputtered particles having direction components along a direction of the magnetic anisotropy
to be allowed are incident on the substrate; and
a transfer mechanism for transferring the substrate from the anisotropy-allowing layer preparation chamber to the magnetic
recording layer preparation chamber;
wherein the anisotropy-allowing layer is made of nitride of niobium, tantalum, niobium alloy or tantalum alloy; or nitrogen-including
niobium, tantalum, niobium alloy or tantalum alloy;
further comprising:
a gas-exposure chamber in which a prepared anisotropy-allowing layer is exposed to atmospheric gas, nitrogen gas or oxygen
gas, prior to preparation of the magnetic recording layer in the magnetic-recording-layer preparation chamber.
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