| US 7,516,295 B2 | ||
| Method of remapping flash memory | ||
| Ji-hyun In, Seongnam-si (Korea, Republic of); Hyo-jun Kim, Seoul (Korea, Republic of); Kwang-yoon Lee, Seongnam-si (Korea, Republic of); and Tae-sun Chung, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si (Korea, Republic of) | ||
| Filed on Feb. 07, 2005, as Appl. No. 11/50,737. | ||
| Claims priority of application No. 10-2004-0008068 (KR), filed on Feb. 06, 2004. | ||
| Prior Publication US 2005/0174849 A1, Aug. 11, 2005 | ||
| Int. Cl. G06F 12/00 (2006.01) | ||
| U.S. Cl. 711—202 [711/103; 711/158] | 26 Claims |
| 1. A method of re-mapping a flash memory including a plurality of physical units, to evenly use the flash memory, the method
comprising:
arranging a plurality of physical units yet to be mapped according to corresponding erase count values; and
sequentially mapping the plurality of the physical units to a logic unit in a sequence of mapping in such a manner that a
physical unit having a first erase count value is mapped to the logic unit ahead of a physical unit having a second erase
count value,
wherein the first erase count value is less than the second erase count value; and
wherein a physical unit having a largest depth value, indicating that the physical unit is determined to have been most recently
mapped, is excluded from a compaction operation.
|