| US 7,515,470 B2 | ||
| Semiconductor integrated circuit device | ||
| Naoya Tokiwa, Fujisawa (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on May 09, 2008, as Appl. No. 12/118,330. | ||
| Application 12/118330 is a continuation of application No. 11/616112, filed on Dec. 26, 2006, granted, now 7,388,782. | ||
| Claims priority of application No. 2005-373517 (JP), filed on Dec. 26, 2005. | ||
| Prior Publication US 2008/0253192 A1, Oct. 16, 2008 | ||
| Int. Cl. G11C 16/06 (2006.01) | ||
| U.S. Cl. 365—185.09 [365/185.11] | 16 Claims |
| 6. A method for writing data into a nonvolatile semiconductor memory comprising:
writing a first data into the nonvolatile semiconductor memory according to a first information in a first register; and
writing a second data into the nonvolatile semiconductor memory according to the first information in the first register and
a second information in a second register.
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