| US 7,515,459 B2 | ||
| Method of programming a memory cell array using successive pulses of increased duration | ||
| Sang-beom Kang, Hwaseong-si (Korea, Republic of); Du-eung Kim, Yongin-si (Korea, Republic of); Beak-hyung Cho, Hwaseong-si (Korea, Republic of); and Hye-jin Kim, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Dec. 23, 2005, as Appl. No. 11/315,129. | ||
| Claims priority of application No. 10-2005-0028086 (KR), filed on Apr. 04, 2005. | ||
| Prior Publication US 2006/0221679 A1, Oct. 05, 2006 | ||
| Int. Cl. G11C 11/00 (2006.01); G11C 7/00 (2006.01) | ||
| U.S. Cl. 365—163 [365/191; 365/189.16] | 8 Claims |
| 1. A method of programming a memory array including a plurality of memory cells, said method comprising:
applying a programming current to a memory cell of the memory array to program the memory cell, wherein the programming current
consists of a first current pulse which at least partially programs a corresponding memory cell to a first state, and second
through nth current pulses which are applied in succession to the corresponding memory cell which was at least partially programmed to
the first state by the first current pulse, wherein n is an integer of 3 or more;
wherein a current amplitude of the first through nth current pulses decreases with each successive pulse, and wherein a pulse duration of the first through nth current pulses increases with each successive pulse.
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