| US 7,515,283 B2 | ||
| Parallel profile determination in optical metrology | ||
| Tri Thanh Khuong, San Jose, Calif. (US); Junwei Bao, Palo Alto, Calif. (US); Jeffrey Alexander Chard, Sunnyvale, Calif. (US); Wei Liu, Santa Clara, Calif. (US); Ying Zhu, Cupertino, Calif. (US); Sachin Deshpande, San Jose, Calif. (US); Pranav Sheth, San Jose, Calif. (US); and Hong Qiu, Union City, Calif. (US) | ||
| Assigned to Tokyo Electron, Ltd., Tokyo (Japan) | ||
| Filed on Jul. 11, 2006, as Appl. No. 11/485,048. | ||
| Prior Publication US 2008/0013108 A1, Jan. 17, 2008 | ||
| Int. Cl. G01B 11/14 (2006.01); G06F 15/00 (2006.01) | ||
| U.S. Cl. 356—625 [356/601; 356/636; 438/14; 702/127] | 25 Claims |
| 1. A method of processing requests for wafer structure profile determination from optical metrology measurements, the method
comprising:
obtaining a plurality of measured diffraction signals of a plurality of structures formed on one or more wafers;
distributing the plurality of measured diffraction signals to a plurality of instances of a profile search module, wherein
the plurality of instances of the profile search model are activated in one or more processing threads of one or more computer
systems;
processing in parallel the plurality of measured diffraction signals using the plurality of instances of the profile search
module to determine profiles of the plurality of structures corresponding to the plurality of measured diffraction signals;
and
storing the determined profiles of the plurality of structures.
|