| US 7,514,848 B2 | ||
| Piezoelectric stack and production method of piezoelectric stack | ||
| Yoichi Kobane, Kuwana (Japan); Akira Fujii, Yokkaichi (Japan); Hideo Kamiya, Nagoya (Japan); and Hiroaki Makino, Aichi (Japan) | ||
| Assigned to Denso Corporation, Kariya, Aichi-Pref. (Japan); and Toyota Jidosha Kabushiki Kaisha, Toyota-Shi, Aichi-Ken (Japan) | ||
| Filed on Feb. 17, 2005, as Appl. No. 11/59,635. | ||
| Claims priority of application No. 2004-040441 (JP), filed on Feb. 17, 2004. | ||
| Prior Publication US 2005/0206274 A1, Sep. 22, 2005 | ||
| Int. Cl. H01L 41/08 (2006.01) | ||
| U.S. Cl. 310—328 [310/365; 310/366] | 4 Claims |
| 1. A piezoelectric stack obtained by alternately stacking a piezoelectric layer comprising PZT (lead titanate zirconate) and
an internal electrode layer,
wherein the grain boundary-filling factor of a Pb-based glass in the crystal grain boundary of said piezoelectric layer is
95% or more over the whole crystal grain boundary of the piezoelectric layer.
|