| US 7,514,772 B2 | ||
| Method of manufacturing a semiconductor apparatus | ||
| Tomoki Kobayashi, Nagano (Japan); Toshiji Shimada, Nagano (Japan); Akinobu Inoue, Nagano (Japan); Atsunori Kajiki, Nagano (Japan); Hiroyuki Kato, Nagano (Japan); and Hiroshi Shimizu, Nagano (Japan) | ||
| Assigned to Shinko Electric Industries Co., Ltd., Nagano-shi (Japan) | ||
| Filed on Apr. 25, 2006, as Appl. No. 11/380,128. | ||
| Claims priority of application No. 2005-132539 (JP), filed on Apr. 28, 2005. | ||
| Prior Publication US 2006/0244131 A1, Nov. 02, 2006 | ||
| Int. Cl. H01L 23/02 (2006.01) | ||
| U.S. Cl. 257—686 [257/783] | 5 Claims |
| 1. A semiconductor apparatus comprising:
a substrate;
an electronic component mounted on said substrate;
a sealing resin for sealing said electronic component;
a resin layer disposed directly on the sealing resin, said resin layer having an adhesion to a conductive film which is higher
than an adhesion of said sealing resin to the conductive film; and
a conductive pattern electrically connected to the electronic component and disposed on the resin layer,
wherein the substrate has an electrode, which electrically connects the conductive pattern and the electronic component, and
wherein at least a part of the resin layer is in contact with the electrode.
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