| US 7,514,767 B2 | ||
| Fan out type wafer level package structure and method of the same | ||
| Wen-Kun Yang, Hsinchu (Taiwan) | ||
| Assigned to Advanced Chip Engineering Technology Inc., Hsinchu County (Taiwan) | ||
| Filed on Jul. 07, 2006, as Appl. No. 11/456,141. | ||
| Application 11/456141 is a continuation in part of application No. 10/725933, filed on Dec. 03, 2003. | ||
| Prior Publication US 2006/0231958 A1, Oct. 19, 2006 | ||
| Int. Cl. H01L 23/495 (2006.01) | ||
| U.S. Cl. 257—666 [257/700; 257/712; 257/E23.006; 257/E23.02] | 18 Claims |

| 1. A fan out type wafer level package structure, comprising:
a metal alloy base, wherein material of said metal alloy base comprises Alloy 42, Fe—Ni—Co alloy, Cu—Fe alloy, Cu—Cr alloy,
Cu—Ni—Si alloy, Cu—Sn alloy or Fe—Ni alloy with fiber glass material laminated;
an adhesion material formed on said base;
a die having a plurality of pads on a top surface that is opposite a bottom surface which is on said adhesion material;
a first dielectric layer formed on said metal alloy base and filled in a space except said die on said metal alloy base, wherein
the first dielectric layer includes silicone rubber, epoxy, resin or BCB to act as a buffer layer for releasing stress;
a second dielectric layer formed on said first dielectric layer and said die, and said second dielectric layer having first
openings for contact with said plurality of pads;
a contact conductive layer formed on said plurality of pads of said die and within said first openings to electrically couple
with said first pads, respectively;
a plurality of conductive lines formed on said second dielectric layer and in contact with, said contact conductive layer
and substantially filling said first openings, and said conductive lines being extended out from corresponding said first
contact conductive layer to corresponding end points;
an isolation layer formed on said conductive lines and said second dielectric layer, and said first isolation layer having
second openings on said first conductive lines; and
UBM (under ball metallurgy) and/or solder balls passing through said isolation layer welded on said second openings for coupling
with said conductive lines, respectively.
|