| US 7,514,375 B1 | ||
| Pulsed bias having high pulse frequency for filling gaps with dielectric material | ||
| Sunil Shanker, Santa Clara, Calif. (US); and Chi-I Lang, Sunnyvale, Calif. (US) | ||
| Assigned to Novellus Systems, Inc., San Jose, Calif. (US) | ||
| Filed on Aug. 08, 2006, as Appl. No. 11/500,799. | ||
| Int. Cl. H01L 21/31 (2006.01); H01L 21/469 (2006.01) | ||
| U.S. Cl. 438—788 [438/789; 257/E21.274; 257/E21.49; 427/255.37] | 27 Claims |
| 1. In integrated circuit fabrication, a method for filling a gap with dielectric material by HDP-CVD, comprising:
providing in a vacuum chamber a substrate containing a gap;
providing a process gas including dielectric-forming constituents;
providing a plasma discharge to create in said vacuum chamber excited species from said process gas;
applying a bias to said substrate, thereby depositing dielectric material in said gap to fill partially said gap and simultaneously
sputtering dielectric material in said gap;
wherein said applying a bias comprises:
applying a pulsed bias to said substrate, said pulsed bias having a pulse frequency not less than about 150 Hz, pulses of
said pulsed bias having a duty cycle.
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