	US 7,514,367 B2
	Method for manufacturing a narrow structure on an integrated circuit
Hsiang Lan Lung, Elmsford, N.Y. (US); Chiahua Ho, Kaoshing (Taiwan); Shih Hung Chen, Elmsford, N.Y. (US); and Chieh Fang Chen, Panchiao (Taiwan)
Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan)
Filed on May 11, 2006, as Appl. No. 11/382,739.
Application 11/382739 is a continuation in part of application No. 11/155067, filed on Jun. 17, 2005, granted, now 7,321,130.
Prior Publication US 2006/0286743 A1, Dec. 21, 2006
Int. Cl. H01L 21/302 (2006.01)

U.S. Cl. 438—734 [438/3; 438/84; 438/95; 438/584; 438/595; 438/947]

13 Claims

1. A method for manufacturing a narrow structure, comprising:

providing a substrate having a top surface;

forming a layer of first material on the substrate;

forming a layer of a pattern material on the layer of first material;

defining a pattern in the layer of pattern material, the pattern including a ledge in the pattern material having a sidewall extending substantially to the layer of first material;

depositing a sidewall material over the ledge in the pattern material, and etching the sidewall material to form a sidewall etch mask on the ledge, the sidewall etch mask having a first side away from the ledge and a second side proximate to the ledge, and covering the layer of first material in a line with a width between the first and second sides; and

etching the layer of first material using the first side of the sidewall etch mask and the pattern in the layer of pattern material as an etch mask;

depositing a second layer of material over the sidewall etch mask, the layer of pattern material, and exposed portions of the layer of first material;

applying a planarization technique to remove portions of the second layer of material over the pattern in the layer of pattern material, exposing the pattern in the layer of pattern material and leaving a second pattern in the second layer of material over the substrate on the second side of the sidewall etch mask;

removing the exposed pattern in the layer of the pattern material; and

second etching remaining portions of the first material using the second side of the sidewall etch mask and the second pattern in the second layer of material as an etch mask to define a line of the first material on the substrate having a width substantially determined by the width of the sidewall etch mask.