| US 7,514,363 B2 | ||
| Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use | ||
| Gautam Banerjee, Chandler, Ariz. (US); Timothy Frederick Compton, Casa Grande, Ariz. (US); Junaid Ahmed Siddiqui, Richmond, Va. (US); and Ajoy Zutshi, Chandler, Ariz. (US) | ||
| Assigned to DuPont Air Products NanoMaterials LLC, Tempe, Ariz. (US) | ||
| Filed on Aug. 29, 2005, as Appl. No. 11/212,628. | ||
| Application 11/212628 is a continuation in part of application No. 10/690623, filed on Oct. 23, 2003, granted, now 7,247,566. | ||
| Prior Publication US 2006/0046490 A1, Mar. 02, 2006 | ||
| Int. Cl. H01L 21/302 (2006.01); H01L 21/461 (2006.01) | ||
| U.S. Cl. 438—692 [438/691; 438/693; 252/79.2; 252/79.4] | 20 Claims |
| 1. A method of chemical-mechanical planarization, said method comprising the steps of:
A) providing a substrate comprising copper, at least one dielectric material, and at least one barrier material;
B) movably contacting the substrate with a polishing pad, an abrasive material, and a fluid composition comprising about 0.1%
to about 8% by weight based on the total weight of the fluid of a per-type oxidizing compound, between 0.1% and 5% by weight
based on the total weight of the fluid of benzenesulfonic acid and/or salt thereof, and water, wherein the composition has
a pH ranging from 4.5 to about 12, and wherein the composition is substantially free of amino acid having two or more nitrogen
atoms.
|