| US 7,514,344 B2 | ||
| Lateral bipolar transistor | ||
| Tatsuhiko Ikeda, Tokyo (Japan) | ||
| Assigned to Renesas Technology Corp., Tokyo (Japan) | ||
| Filed on Mar. 05, 2007, as Appl. No. 11/682,126. | ||
| Claims priority of application No. 2006-059950 (JP), filed on Mar. 06, 2006. | ||
| Prior Publication US 2007/0205487 A1, Sep. 06, 2007 | ||
| Int. Cl. H01L 21/425 (2006.01) | ||
| U.S. Cl. 438—526 [438/575; 257/E51.004] | 7 Claims |
| 1. A lateral bipolar transistor formed over a substrate of an SOI structure having a silicon layer provided over an embedded
insulating film layer, comprising:
emitter diffusion regions formed in the substrate;
a base drawing diffusion region formed at a position away from each of the emitter diffusion regions;
isolation insulating films that reach the embedded insulating film layer and are formed between the emitter diffusion regions
and the base drawing diffusion region;
a base diffusion region including, on both sides of the isolation insulating films, two end areas respectively brought into
contact with the side faces of the isolation insulating films while ensuring electrical connections to the base drawing diffusion
region, and central areas formed integrally with the two end areas so as to cover the peripheries of the emitter diffusion
regions; and
a collector diffusion region at least formed around the central areas of the base diffusion region.
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