| US 7,514,338 B2 | ||
| Method of manufacturing a semiconductor device | ||
| Osamu Arisumi, Yokohama (Japan); and Masahiro Kiyotoshi, Sagamihara (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Oct. 10, 2006, as Appl. No. 11/544,747. | ||
| Claims priority of application No. 2006-009031 (JP), filed on Jan. 17, 2006. | ||
| Prior Publication US 2007/0166951 A1, Jul. 19, 2007 | ||
| Int. Cl. H01L 21/76 (2006.01) | ||
| U.S. Cl. 438—424 [438/435; 438/437; 438/781; 438/790] | 15 Claims |
| 1. A method of manufacturing a semiconductor device, comprising:
preparing a work piece having a trench on its main surface side;
forming a polymer film containing a polymer containing silicon, hydrogen and nitrogen on the main surface of the work piece;
holding the work piece with the polymer film in a first atmosphere, which contains oxygen, and whose oxygen partial pressure
is set in a range of 16 to 48 Torr;
oxidizing the polymer film in a second atmosphere containing water vapor to form an oxide film containing a silicon oxide
as a main component, after holding the work piece in the first atmosphere; and
removing an upper portion of the oxide film to remain a lower portion of the oxide film in the trench.
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