| US 7,514,336 B2 | ||
| Robust shallow trench isolation structures and a method for forming shallow trench isolation structures | ||
| Arun K. Nanda, Orlando, Fla. (US); Nace Rossi, Singapore (Singapore); and Ranbir Singh, Singapore (Singapore) | ||
| Assigned to Agere Systems Inc., Allentown, Pa. (US) | ||
| Filed on Dec. 29, 2005, as Appl. No. 11/321,206. | ||
| Prior Publication US 2007/0152294 A1, Jul. 05, 2007 | ||
| Int. Cl. H01L 21/76 (2006.01) | ||
| U.S. Cl. 438—424 [438/221; 438/296; 257/E21.552] | 7 Claims |
| 1. A method for forming a shallow trench isolation structure, comprising:
forming an opening in a semiconductor layer;
depositing a dielectric material in the opening and over the semiconductor layer;
removing a portion of the dielectric material to form an isolation structure, the isolation structure having at least one
void between the semiconductor layer and the isolation structure;
depositing a conformal material overlying the isolation structure and the semiconductor layer wherein the at least one void
is filled with the conformal material; and
removing the conformal material from the semiconductor layer and removing a portion of the conformal layer from the isolation
structure, whereby the at least one void remains filled and a remnant of the conformal material remains on at least one side
of the isolation structure that extends above the upper surface of the semiconductor layer after the step of removing the
conformal material.
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