| US 7,514,326 B2 | ||
| Organic thin film transistor, display device using the same and method of fabricating the same | ||
| Chang Wook Han, Seoul (Korea, Republic of) | ||
| Assigned to LG Display Co., Ltd, Seoul (Korea, Republic of) | ||
| Filed on May 12, 2006, as Appl. No. 11/432,554. | ||
| Claims priority of application No. 10-2005-0039969 (KR), filed on May 13, 2005. | ||
| Prior Publication US 2006/0258070 A1, Nov. 16, 2006 | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—283 [257/E21.623; 257/E21.637] | 16 Claims |

| 1. A display device comprising:
a gate line and a gate electrode formed on a substrate, the gate line and the gate electrode being formed of a stack of a
first gate line layer and a second gate line layer;
a gate insulating layer on the gate electrode;
a data line crossing the gate line on the gate insulating layer to define a pixel region;
source and drain electrodes partially overlapping the gate electrode;
an organic semiconductor layer on the source and drain electrodes and the data line;
a passivation layer on the organic semiconductor layer including a contact hole exposing the drain electrode; and
a pixel electrode on the passivation layer and connected through the contact hole to the drain electrode, wherein the first
gate line layer includes a cut portion,
wherein the source electrode protrudes from the data line.
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