US 7,514,326 B2
Organic thin film transistor, display device using the same and method of fabricating the same
Chang Wook Han, Seoul (Korea, Republic of)
Assigned to LG Display Co., Ltd, Seoul (Korea, Republic of)
Filed on May 12, 2006, as Appl. No. 11/432,554.
Claims priority of application No. 10-2005-0039969 (KR), filed on May 13, 2005.
Prior Publication US 2006/0258070 A1, Nov. 16, 2006
Int. Cl. H01L 21/336 (2006.01)
U.S. Cl. 438—283  [257/E21.623; 257/E21.637] 16 Claims
OG exemplary drawing
 
1. A display device comprising:
a gate line and a gate electrode formed on a substrate, the gate line and the gate electrode being formed of a stack of a first gate line layer and a second gate line layer;
a gate insulating layer on the gate electrode;
a data line crossing the gate line on the gate insulating layer to define a pixel region;
source and drain electrodes partially overlapping the gate electrode;
an organic semiconductor layer on the source and drain electrodes and the data line;
a passivation layer on the organic semiconductor layer including a contact hole exposing the drain electrode; and
a pixel electrode on the passivation layer and connected through the contact hole to the drain electrode, wherein the first gate line layer includes a cut portion,
wherein the source electrode protrudes from the data line.