| US 7,514,315 B2 | ||
| Methods of forming capacitor structures having aluminum oxide diffusion barriers | ||
| Jong-Cheol Lee, Seoul (Korea, Republic of); Kyoung-Ryul Yoon, Goyang-si (Korea, Republic of); Ki-Vin Im, Suwon-si (Korea, Republic of); Jae-Hyun Yeo, Bucheon-si (Korea, Republic of); Eun-Ae Chung, Suwon-si (Korea, Republic of); and Jin-Il Lee, Seongnam-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of) | ||
| Filed on Apr. 11, 2007, as Appl. No. 11/733,970. | ||
| Claims priority of application No. 10-2006-0039972 (KR), filed on May 03, 2006. | ||
| Prior Publication US 2007/0257370 A1, Nov. 08, 2007 | ||
| Int. Cl. H01L 21/8242 (2006.01); H01L 21/20 (2006.01) | ||
| U.S. Cl. 438—238 [438/239; 438/240; 438/396; 438/770; 257/E21.008; 257/E21.648; 257/E21.649] | 8 Claims |
| 1. A method of forming a multilayer electrode structure comprising:
forming a conductive layer including aluminum;
forming an oxide layer on the conductive layer, the oxide layer including zirconium oxide or titanium oxide;
re-oxidizing the oxide layer using an oxygen plasma to form an oxygen diffusion barrier layer including aluminum oxide at
an interface between the conductive layer and the oxide layer; and
forming a plate electrode on the oxide layer that has been reoxidized, to provide a capacitor.
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