| US 7,514,282 B2 | ||
| Patterned silicon submicron tubes | ||
| Tingkai Li, Vancouver, Wash. (US); Jong-Jan Lee, Camas, Wash. (US); Jer-Shen Maa, Vancouver, Wash. (US); and Sheng Teng Hsu, Camas, Wash. (US) | ||
| Assigned to Sharp Laboratories of America, Inc., Camas, Wash. (US) | ||
| Filed on Jan. 04, 2007, as Appl. No. 11/649,634. | ||
| Prior Publication US 2008/0164577 A1, Jul. 10, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—41 [438/719; 438/723; 438/724; 438/743; 438/744; 438/756; 438/757; 438/FOR.243; 438/FOR.244; 977/743] | 17 Claims |
| 1. A method for patterning submicron silicon (Si) tubes, the method comprising:
providing a Si substrate;
forming a silicon dioxide film overlying the Si substrate;
forming an array of silicon dioxide rods;
forming Si3N4 tubes surrounding the silicon dioxide rods;
etching the silicon dioxide rods;
etching exposed regions of the Si substrate, forming Si tubes underlying the Si3N4 tubes; and,
removing the Si3N4 tubes.
|