| US 7,514,125 B2 | ||
| Methods to improve the in-film defectivity of PECVD amorphous carbon films | ||
| Deenesh Padhi, Sunnyvale, Calif. (US); Chiu Chan, Foster City, Calif. (US); Sudha Rathi, San Jose, Calif. (US); Ganesh Balasubramanian, Sunnyvale, Calif. (US); Jianhua Zhou, San Jose, Calif. (US); Karthik Janakiraman, San Jose, Calif. (US); Martin J. Seamons, San Jose, Calif. (US); Visweswaren Sivaramakrishnan, Cupertino, Calif. (US); Derek R. Witty, Fremont, Calif. (US); and Hichem M'Saad, Santa Clara, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Feb. 28, 2007, as Appl. No. 11/680,278. | ||
| Claims priority of provisional application 60/805706, filed on Jun. 23, 2006. | ||
| Prior Publication US 2007/0295272 A1, Dec. 27, 2007 | ||
| Int. Cl. H05H 1/24 (2006.01) | ||
| U.S. Cl. 427—569 [427/577; 427/249.7] | 7 Claims |
| 1. A method of coating aluminum surfaces of articles utilized in semiconductor processing chambers, the method comprising:
placing at least one article from the group consisting of a showerhead, a support pedestal, and a chamber body, as used in
semiconductor processing, into a processing chamber, the at least one article having an aluminum surface;
flowing a first gas comprising a carbon source into the processing chamber;
flowing a second gas comprising a nitrogen source into the processing chamber;
forming a plasma in the chamber; and
depositing a coating material comprising a nitrogen containing amorphous carbon layer on the aluminum surface.
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