| US 7,514,119 B2 | ||
| Method and apparatus for using solution based precursors for atomic layer deposition | ||
| Ce Ma, Cary, N.C. (US); Qing Min Wang, Edison, N.J. (US); Patrick J. Helly, Valley Center, Calif. (US); and Richard Hogle, Oceanside, Calif. (US) | ||
| Assigned to Linde, Inc., Murray Hill, N.J. (US) | ||
| Filed on Apr. 10, 2006, as Appl. No. 11/400,904. | ||
| Claims priority of provisional application 60/676491, filed on Apr. 29, 2005. | ||
| Prior Publication US 2006/0269667 A1, Nov. 30, 2006 | ||
| Int. Cl. C23C 16/00 (2006.01) | ||
| U.S. Cl. 427—255.31 [427/255.28; 427/255.25] | 1 Claim |
| 1. A method of atomic layer deposition comprising:
alternately delivering a vaporized precursor solution and a vaporized reaction solution to a deposition chamber;
forming a monolayer of components of the precursor solution and reaction solution on surface of a substrate in the deposition
chamber; and
repeating until a thin film of a predetermined thickness is formed;
wherein the vaporized precursor solution comprises [(t-Bu)Cp]2HfMe2 dissolved in ethylcyclohexane or octane and wherein the thin film is HfO2; and
wherein the precursor solution is delivered to a vaporizer at room temperature and vaporized without decomposition or condensation.
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