US 7,514,115 B2
	Method of forming thin film of organometallic compound, thin film of organometallic compound, method of manufacturing organoelectronic device equipped with the same, organoelectronic device, method of manufacturing organic electroluminescence, organic electroluminescence, and electronic apparatus
Takeshi Takashima, Fujimi-cho (Japan); Katsuyuki Morii, Suwa (Japan); Hirofumi Hokari, Chino (Japan); and Rie Makiura, Suwa (Japan)
Assigned to Seiko Epson Corporation, Tokyo (Japan)
Filed on Aug. 23, 2004, as Appl. No. 10/922,994.
Claims priority of application No. 2003-316501 (JP), filed on Sep. 09, 2003.
Prior Publication US 2005/0079277 A1, Apr. 14, 2005
Int. Cl. B05D 5/06 (2006.01)

U.S. Cl. 427—66  [430/322; 430/395; 430/494; 430/311; 430/396; 428/690; 428/704; 428/917; 313/504; 313/506; 260/429.5; 260/429 J; 260/632 A; 427/64; 427/248.1]

12 Claims

1. A method of fabricating a thin film of an Organometallic compound on a substrate, comprising: depositing an organic material by a liquid phase process; and exposing the organic material to a metal vapor, the exposing of the organic material resulting in the organometallic compound, the step of exposing being executed after the step of depositing to form the thin film of the organometallic compound.