| US 7,513,954 B2 | ||
| Plasma processing apparatus and substrate mounting table employed therein | ||
| Hachishiro Iizuka, Nirasaki (Japan); and Taro Ikeda, Nirasaki (Japan) | ||
| Assigned to Tokyo Electron Limited, Tokyo (Japan) | ||
| Appl. No. 10/484,430 PCT Filed Jul. 24, 2002, PCT No. PCT/JP02/07507 § 371(c)(1), (2), (4) Date Jan. 27, 2004, PCT Pub. No. WO03/010809, PCT Pub. Date Feb. 06, 2003. |
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| Claims priority of application No. 2001-227649 (JP), filed on Jul. 27, 2001; and application No. 2002-199102 (JP), filed on Jul. 08, 2002. | ||
| Prior Publication US 2004/0163762 A1, Aug. 26, 2004 | ||
| Int. Cl. C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01) | ||
| U.S. Cl. 118—728 [118/729; 118/730; 118/723 E; 156/345.51; 156/345.52; 156/345.53; 156/345.54; 156/345.55; 156/345.43; 156/345.44; 156/345.45; 156/345.47; 156/345.48] | 24 Claims |
| 1. A plasma processing apparatus comprising:
a processing container for receiving a substrate to be processed and processing the substrate by a plasma of a processing
gas;
a substrate mounting table for mounting the substrate thereon, the substrate mounting table being made of a ceramic;
a gas supplying unit for supplying the processing gas into the processing container,
a first electrode embedded inside the substrate mounting table;
a heating unit embedded in the substrate mounting table and disposed under the first electrode;
a high frequency power supply for supplying a high frequency power connected to the electrode; and
one or more exposed second electrodes, wherein each of the second electrodes is installed in a hole of the substrate mounting
table to be electrically directly connected to the first electrode through the hole and the second electrodes are exposed
toward the outside of the substrate mounting table,
wherein an annular ring for covering an edge of the substrate to be processed is disposed above the substrate mounting table,
wherein one or more through holes are formed in the ring at positions corresponding to the second electrodes, a top surface
of each of the second electrodes is lower than a top surface of the ring, and one or more countersinks are formed at lower
parts of the through and
wherein the second electrodes are exposed to the plasma in the processing container via the through holes.
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