| US 7,351,594 B2 | ||
| Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier | ||
| Jun-Soo Bae, Gyeonggi-do (Korea, Republic of); Jang-Eun Lee, Gyeonggi-do (Korea, Republic of); Hyun-Jo Kim, Gyeonggi-do (Korea, Republic of); In-Gyu Baek, Seoul (Korea, Republic of); and Young-Ki Ha, Gyeonggi-do (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of) | ||
| Filed on Feb. 12, 2007, as Appl. No. 11/673,612. | ||
| Application 11/673612 is a division of application No. 10/888964, filed on Jul. 09, 2004. | ||
| Claims priority of application No. 2003-0046796 (KR), filed on Jul. 10, 2003. | ||
| Prior Publication US 2007/0148789 A1, Jun. 28, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—3 [438/238; 257/E21.665] | 29 Claims |
| 1. A method of forming a magnetic tunnel junction structure of a magnetic random access memory device comprising:
forming a lower electrode;
forming an oxide layer on the lower electrode; and
forming a magnetic tunnel junction comprising a fixed layer including a seed layer, a tunneling barrier and a free layer,
on the oxide layer;
wherein forming the lower electrode comprises:
forming a Ti-rich TiN layer;
chemical mechanical polishing the Ti-rich TiN layer; and
ion beam etching the Ti-rich TiN layer.
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