| US 7,512,016 B2 | ||
| Method of programming and erasing a p-channel be-SONOS NAND flash memory | ||
| Hang-Ting Lue, Hsinchu (Taiwan) | ||
| Assigned to MACRONIX International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on May 16, 2008, as Appl. No. 12/121,791. | ||
| Application 12/121791 is a division of application No. 11/381760, filed on May 05, 2006, granted, now 7,391,652. | ||
| Prior Publication US 2008/0212375 A1, Sep. 04, 2008 | ||
| Int. Cl. G11C 16/04 (2006.01) | ||
| U.S. Cl. 365—185.29 [365/185.17; 365/185.33] | 15 Claims |
| 1. An operating method for a p-channel flash memory cell, the memory cell including a gate, a source, a drain and a channel
between the source and the drain, comprising:
applying a first voltage to the gate, and
floating the source and the drain, wherein the first voltage is sufficiently high to cause positive Fowler-Nordheim electron
injection from the channel, such that the memory cell is caused to be in an erased state.
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