| US 7,512,010 B2 | ||
| Voltage regulator for flash memory device | ||
| Ji-Ho Cho, Suwon-si (Korea, Republic of); and Hyeok Kang, Gwangjang-gu (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Jun. 11, 2007, as Appl. No. 11/760,829. | ||
| Claims priority of application No. 10-2006-0054026 (KR), filed on Jun. 15, 2006. | ||
| Prior Publication US 2007/0297238 A1, Dec. 27, 2007 | ||
| Int. Cl. G11C 16/06 (2006.01) | ||
| U.S. Cl. 365—185.23 [365/189.07; 365/189.11; 365/226] | 20 Claims |
| 1. A voltage regulator of a flash memory device, the voltage regulator configured to output a regulated voltage, the voltage
regulator comprising:
a selection circuit configured to receive and selectively output at least one of an external high voltage and an internal
pumping voltage, the selection being in response to a mode signal;
a first switch coupled to an output of the selection circuit, the first switch having a first switching current;
a second switch coupled to the output of the selection circuit, the second switch having a second switching current, the second
switching current being different from the first switching current; and
a switch control circuit coupled to the first switch and the second switch, the switch control circuit configured to select
at least one of the first switch and the second switch in response to the mode signal, the switch control circuit further
configured to control the at least one selected switch according to the regulated voltage.
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