| US 7,512,009 B2 | ||
| Method for programming a reference cell | ||
| Eduardo Maayan, Kfar Saba (Israel); Ron Eliyahu, Herzelia (Israel); Ameet Lann, Macabim (Israel); and Boaz Eitan, Ra'anana (Israel) | ||
| Assigned to Saifun Semiconductors Ltd., Netanya (Israel) | ||
| Filed on Apr. 27, 2006, as Appl. No. 11/413,962. | ||
| Application 11/413962 is a division of application No. 10/454820, filed on Jun. 05, 2003, granted, now 7,064,983. | ||
| Application 10/454820 is a division of application No. 09/827757, filed on Apr. 05, 2001, granted, now 6,584,017. | ||
| Prior Publication US 2006/0268621 A1, Nov. 30, 2006 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—185.2 [365/185.22; 365/185.18; 365/185.24; 365/185.29] | 2 Claims |
| 1. A method for programming a set of reference cells for use in performing respective read operations on an integrated circuit
memory having a plurality of memory cells, comprising the steps of:
i) driving a golden cell on the die with a predetermined external gate voltage value;
ii) determining a placement for a reference voltage read signal relative to the golden cell;
iii) placing a reference voltage erase verify signal relative to the reference voltage read signal; and
iv) placing a reference voltage program verify signal relative to the reference voltage read signal.
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