comprising:

a memory cell including a MOS transistor and a magnetoresistive element having a first magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer which is provided between the magnetic fixed layer and the magnetic recording layer;

a bit line which passes a first current through the magnetoresistive element, the first current being used for generation of a spin-polarized electrons;

a word line through which a second current is passed, the second current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element;

a first driver connected to the bit line and supplies the first current;

a second driver connected to the word line and supplies the second current;

a first decoder which receives a writing data to be written into the magnetoresistive element and controls the first driver to determine a direction of the first current depending on the writing data, and determines timing of cutoff of the first current; and

a second decoder which controls the second driver to determine the direction of the second current depending on the writing data, and makes the timing of the cutoff of the second current later than the timing of the cutoff of the first current.