| US 7,511,936 B2 | ||
| Method and apparatus for dynamic plasma treatment of bipolar ESC system | ||
| Cuker Huang, Banciao (Taiwan); Shing-Long Lee, Hsin hu (Taiwan); Yi-Jou Lu, Hsinchu (Taiwan); and Chia-Ling Lee, Keelung (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (Taiwan) | ||
| Filed on Jun. 19, 2006, as Appl. No. 11/425,006. | ||
| Claims priority of provisional application 60/700731, filed on Jul. 20, 2005. | ||
| Prior Publication US 2007/0019360 A1, Jan. 25, 2007 | ||
| Int. Cl. H02N 13/00 (2006.01) | ||
| U.S. Cl. 361—234 | 27 Claims |
| 1. A method for plasma etching a substrate in a plasma chamber comprising:
positioning the substrate on a chuck within the plasma chamber, the chuck adapted to provide a bipolar electrostatic charge
to the substrate;
charging the chuck to form an electrostatic charge buildup on the substrate;
plasma etching the substrate;
grounding the chuck; and
counteracting the electrostatic charge buildup by discharging an RF signal of varying frequency within the plasma chamber.
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