	US 7,511,927 B2
	Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus
Hiromi Yuasa, Kanagawa-ken (Japan); Masatoshi Yoshikawa, Kanagawa-ken (Japan); Katsuhiko Koui, Kanagawa-ken (Japan); Hitoshi Iwasaki, Kanagawa-ken (Japan); and Masashi Sahashi, Kanagawa-ken (Japan)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan)
Filed on Nov. 21, 2005, as Appl. No. 11/282,659.
Application 11/282659 is a division of application No. 10/175960, filed on Jun. 21, 2002, granted, now 7,218,483.
Claims priority of application No. 2001-190511 (JP), filed on Jun. 22, 2001.
Prior Publication US 2006/0067017 A1, Mar. 30, 2006
Int. Cl. G11B 5/39 (2006.01)

U.S. Cl. 360—324.1

4 Claims

1. A magnetoresistive effect element comprising:

a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer, and a resistance adjustment layer interposed between said magnetization-pinned layer and said magnetization free layer and containing as its major component one material selected from the group consisting of graphite, As, Sb and Bi, wherein a specific resistance of the resistance adjustment layer ranges from 40 μΩcm to 1 mΩcm; and

a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film plane of said magnetoresistive effect film.