| US 7,511,355 B2 | ||
| Semiconductor device having fuse element | ||
| Hiroki Takemoto, Gifu (Japan) | ||
| Assigned to Sanyo Electric Co., Ltd., (Japan) | ||
| Filed on Sep. 20, 2006, as Appl. No. 11/523,890. | ||
| Claims priority of application No. 2005-274908 (JP), filed on Sep. 22, 2005. | ||
| Prior Publication US 2007/0063312 A1, Mar. 22, 2007 | ||
| Int. Cl. H01L 23/62 (2006.01) | ||
| U.S. Cl. 257—529 [257/355; 257/530] | 3 Claims |
| 1. A semiconductor device including an electrical circuit formed on a semiconductor substrate, comprising:
a switching element; and
a fuse element which is connected in series with the switching element and which blows out as a result if an electric current
flowing therethrough when the switching element is placed in an electrically conducting state,
wherein an electrostatic breakdown protection circuit is connected to a control line which applies a control signal for switching
the switching element; and
the electrostatic breakdown protection circuit comprises:
a first diode having an anode connected to the control line and a cathode connected to a power source; and
a second diode having a cathode connected to the control line and an anode being grounded.
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