| US 7,511,324 B2 | ||
| Solid-state imaging device | ||
| Naoko Unagami, Yokohama (Japan); and Kenichi Arakawa, Fujisawa (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jun. 14, 2007, as Appl. No. 11/763,129. | ||
| Claims priority of application No. 2006-167785 (JP), filed on Jun. 16, 2006. | ||
| Prior Publication US 2007/0290245 A1, Dec. 20, 2007 | ||
| Int. Cl. H01L 31/112 (2006.01) | ||
| U.S. Cl. 257—294 [257/233; 257/291; 257/292; 257/432; 257/E27.133; 257/E31.121] | 18 Claims |
| 1. A solid-state imaging device comprising:
an imaging region which is formed on a semiconductor substrate and includes a plurality of unit pixels;
an optical black pixel region which surrounds the imaging region and includes a plurality of optical black pixels, an entirety
of the optical black pixel region being covered with a light-blocking film, wherein the optical black pixel region includes
an effective optical black pixel region which includes a plurality of effective optical black pixels, and a dummy optical
black pixel region which includes a plurality of dummy optical black pixels; and
a barrier layer which is formed in the optical black pixel region of the semiconductor substrate and has an impurity concentration
higher than an impurity concentration of the semiconductor substrate.
|