| US 7,511,314 B2 | ||
| Light emitting device and method of fabricating the same | ||
| Masato Yamada, Annaka (Japan); Masayuki Shinohara, Annaka (Japan); Masanobu Takahashi, Annaka (Japan); Keizou Adomi, Annaka (Japan); and Jun Ikeda, Annaka (Japan) | ||
| Assigned to Shin-Etsu Handotai Co., Ltd., Toyko (Japan) | ||
| Appl. No. 10/575,853 PCT Filed Oct. 15, 2004, PCT No. PCT/JP2004/015270 § 371(c)(1), (2), (4) Date Apr. 14, 2006, PCT Pub. No. WO2005/038936, PCT Pub. Date Apr. 28, 2005. |
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| Claims priority of application No. 2003-356955 (JP), filed on Oct. 16, 2003. | ||
| Prior Publication US 2007/0145405 A1, Jun. 28, 2007 | ||
| Int. Cl. H01L 29/26 (2006.01) | ||
| U.S. Cl. 257—101 [257/86; 257/98; 257/102; 257/103; 257/E33.001; 438/22; 438/37; 438/936] | 16 Claims |
| 1. A light emitting device comprising:
a light emitting layer portion composed of a III-V compound semiconductor; and
a transparent thick-film semiconductor layer having a thickness of 10 μm or more, formed on at least one main surface of the
light emitting layer portion, and composed of a III-V compound semiconductor having a band gap energy larger than a light
quantum energy equivalent to a peak wavelength of emission flux from the light emitting layer portion,
the transparent thick-film semiconductor layer has the side face portions configured as chemically-etched surfaces, and has
a doping-controlled region having a controlled dopant concentration of 5×1016/cm3 to 2×1018/cm3, both ends inclusive, formed therein to a thickness of 10 μm or more.
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