| US 7,511,311 B2 | ||
| Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same | ||
| Takeshi Kususe, Tokushima (Japan); and Takahiko Sakamoto, Anan (Japan) | ||
| Assigned to Nichia Corporation, Anan-shi (Japan) | ||
| Appl. No. 10/522,887 PCT Filed Aug. 01, 2003, PCT No. PCT/JP03/09836 § 371(c)(1), (2), (4) Date Dec. 22, 2005, PCT Pub. No. WO2004/013916, PCT Pub. Date Feb. 12, 2004. |
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| Claims priority of application No. 2002-225043 (JP), filed on Aug. 01, 2002; and application No. 2002-256884 (JP), filed on Sep. 02, 2002. | ||
| Prior Publication US 2006/0231852 A1, Oct. 19, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 257—95 [257/94; 438/29; 438/39; 438/40] | 22 Claims |
| 1. A semiconductor light-emitting device comprising a structured portion including a first conductivity type layer; a second
conductivity type layer; and a luminescent layer between the first and second conductivity type layers,
wherein an upper surface of the structured portion has a smaller width than a lower surface of the structured portion in sectional
view, and the structured portion has inclined side surfaces, and
wherein the inclined side surfces of the structured portion are defined by first side surfaces and second side surfaces, a
width of each of the first side surfaces increases from a lower surface side to an upper surface side, and a width of each
of the second side surfaces increases from the upper surface side to the lower surface side.
|