| US 7,511,289 B2 | ||
| Working method utilizing irradiation of charged particle beam onto sample through passage in gas blowing nozzle | ||
| Takashi Kaito, Chiba (Japan) | ||
| Assigned to SII Nanotechnology Inc., (Japan) | ||
| Filed on May 03, 2007, as Appl. No. 11/799,973. | ||
| Application 11/799973 is a division of application No. 11/048962, filed on Feb. 02, 2005, granted, now 7,235,783. | ||
| Claims priority of application No. 2004-027565 (JP), filed on Feb. 04, 2004; and application No. 2005-023022 (JP), filed on Jan. 31, 2005. | ||
| Prior Publication US 2007/0205376 A1, Sep. 06, 2007 | ||
| Int. Cl. H01J 37/08 (2006.01); H01L 21/306 (2006.01) | ||
| U.S. Cl. 250—492.21 [250/492.3] | 20 Claims |
| 1. A working method of performing a beam assist deposition or a beam assist etching, the working method comprising:
an irradiating process of irradiating a focused charged particle beam onto a region of a sample; and
a gas blowing process of blowing a predetermined gas through a gas blowing nozzle toward the sample region while the focused
charged particle beam passes through a passage in a side portion of the gas blowing nozzle and irradiates the sample region.
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