| US 7,511,288 B2 | ||
| Ion implantation device | ||
| Seiji Ogata, Chigasaki (Japan); Yuzo Sakurada, Susono (Japan); Masayuki Sekiguchi, Toshima-Ku (Japan); and Tsutomu Nishihashi, Susono (Japan) | ||
| Assigned to Ulvac Co., Ltd, Chigasaki (Japan) | ||
| Appl. No. 11/575,197 PCT Filed Nov. 14, 2005, PCT No. PCT/JP2005/020872 § 371(c)(1), (2), (4) Date Mar. 13, 2007, PCT Pub. No. WO2006/054528, PCT Pub. Date May 26, 2006. |
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| Claims priority of application No. 2004-335845 (JP), filed on Nov. 19, 2004. | ||
| Prior Publication US 2008/0054192 A1, Mar. 06, 2008 | ||
| Int. Cl. H01J 37/02 (2006.01) | ||
| U.S. Cl. 250—492.21 [250/492.1; 250/492.2; 250/492.3; 250/396 R; 250/398; 250/400; 250/396 ML; 427/523; 438/514] | 12 Claims |
| 1. An ion implantation device which draws out desired ion species from an ion source for creating ions, accelerates or decelerates
the ion species into desired energy and scans an implantation surface of a substrate with an ion beam so as to implant the
ion beam thereinto, the ion implantation device comprising:
a chamber divided type ion beam scanning mechanism constituted so that:
first, second and third chambers for allowing the ion beam to pass through are arranged in predetermined places on a beam
line of the ion implantation device in this order from an upper stream side,
a first gap intervenes between the first chamber and the second chamber, and a second gap intervenes between the second chamber
and the third chamber,
the second chamber is electrically insulated from the first and third chambers via the first and second gaps, and any one
of the first and second gaps obliquely crosses a standard axis of the ion beam at a predetermined angle,
the second chamber is connected to a scanning power source which applies an electric potential having desired scanning waveform.
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