| US 7,511,217 B1 | ||
| Inter facial architecture for nanostructured optoelectronic devices | ||
| Martin R. Roscheisen, San Francisco, Calif. (US); Brian M. Sager, Palo Alto, Calif. (US); Klaus Petritsch, Foster City, Calif. (US); and Jacqueline Fidanza, San Francisco, Calif. (US) | ||
| Assigned to Nanosolar, Inc., Palo Alto, Calif. (US) | ||
| Filed on Apr. 19, 2003, as Appl. No. 10/419,708. | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 31/00 (2006.01) | ||
| U.S. Cl. 136—263 [136/256] | 32 Claims |
| 19. An optoelectronic apparatus, comprising:
an active layer including:
a nanostructured network layer having a network of regularly spaced structures with spaces between neighboring structures;
one or more network-filling materials disposed in the spaces, wherein at least one network-filling material has complementary
charge transfer properties with respect to the material of the nanostructured network layer;
an interfacial layer disposed between the nanostructured network layer and network-filling material,
wherein the interfacial layer is configured to enhance an efficiency of the apparatus;
wherein the interfacial layer has a material property such that charge-carriers traveling from the nanostructured network
layer to the network-filling material are transported at a different rate than the same type of charge-carriers traveling
from the network-filling material to the nanostructured network layer;
wherein the interfacial layer includes at least one of the following: an acid-, ester-, amide-, amine-, or other-functionalized
fullerene, or functionalized carbon nanotubes.
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