| US 7,510,990 B2 | ||
| Sputtering target, optical thin film and manufacturing method thereof using the sputtering target, and optical recording medium | ||
| Yasuhiro Satoh, Yokohama (Japan); Tsukasa Nakai, Hino (Japan); Sumio Ashida, Yokohama (Japan); Shoko Suyama, Kawasaki (Japan); and Yoshiyasu Ito, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Mar. 07, 2006, as Appl. No. 11/368,685. | ||
| Claims priority of application No. P2005-200782 (JP), filed on Jul. 08, 2005. | ||
| Prior Publication US 2007/0031633 A1, Feb. 08, 2007 | ||
| Int. Cl. C04B 35/565 (2006.01) | ||
| U.S. Cl. 501—88 [501/89; 204/298.13] | 10 Claims |
| 1. A sputtering target containing silicon (Si) and carbon (C) as major components, comprising:
a texture having silicon carbide (SiC) crystal grains and a silicon (Si) phase which continuously exists in a net shape in
gaps among the silicon carbide (SiC) crystal grains and whose average diameter is 1000 nm or less,
wherein a third element other than the major components is contained in the sputtering target, a total amount of the third
element being within a range from 10 to 2000 ppm.
|