| US 7,510,984 B2 | ||
| Method of forming silicon nitride film and method of manufacturing semiconductor device | ||
| Tsuyoshi Saito, Kanagawa-ken (Japan); Hiromi Itoh, Kanagawa (Japan); and Makiko Kitazoe, Kanagawa (Japan) | ||
| Assigned to Ulvac, Inc., Chigasaki-shi (Japan) | ||
| Filed on Feb. 15, 2005, as Appl. No. 11/57,246. | ||
| Claims priority of application No. 2004-058214 (JP), filed on Mar. 02, 2004. | ||
| Prior Publication US 2005/0196977 A1, Sep. 08, 2005 | ||
| Int. Cl. H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—791 [438/793; 438/788] | 8 Claims |
| 1. A method of forming a silicon nitride film comprising:
forming a silicon nitride film by applying a first gas, a second gas, and hydrogen (H2) gas to a catalyst heated in a reduced pressure atmosphere, wherein
the first gas contains silicon and nitrogen, and
the second gas contains nitrogen and hydrogen.
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