| US 7,510,949 B2 | ||
| Methods for producing a multilayer semiconductor structure | ||
| Carlos Mazure, St. Nazaire les Eymes (France); and Bruno Ghyselen, Seyssinet (France) | ||
| Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on Apr. 13, 2005, as Appl. No. 11/106,135. | ||
| Application 11/106135 is a continuation of application No. PCT/IB03/006397, filed on Dec. 05, 2003. | ||
| Application PCT/IB03/006397 is a continuation in part of application No. 10/615259, filed on Jul. 09, 2003, granted, now 6,953,736. | ||
| Application 10/615259 is a continuation in part of application No. 10/614327, filed on Jul. 08, 2003, granted, now 7,018,910. | ||
| Claims priority of application No. 02 08600 (FR), filed on Jul. 09, 2002; application No. 02 08602 (FR), filed on Jul. 09, 2002; and application No. 02 15499 (FR), filed on Dec. 06, 2002. | ||
| Prior Publication US 2005/0191824 A1, Sep. 01, 2005 | ||
| Int. Cl. H01L 21/30 (2006.01); H01L 21/46 (2006.01) | ||
| U.S. Cl. 438—458 [257/E21.568] | 21 Claims |
| 1. A method for producing a multilayer semiconductor structure, which comprises:
providing a support substrate made of a first semiconductor material having a first lattice parameter;
depositing a layer of a second semiconductor material having a second lattice parameter that is substantially different than
the first lattice parameter onto the support substrate to form an intermediate structure having an interface between the first
and second semiconductor materials, the depositing being conducted such that most of the defects in the deposited layer are
confined to an adaptation layer of the second semiconductor material layer that is located in a region adjacent to the interface;
creating a zone of weakness in the intermediate structure;
bonding the second semiconductor material layer to a target substrate;
detaching the support substrate at the zone of weakness to obtain a multilayer semiconductor structure having an exposed surface
where detached; and
treating the exposed surface to assure that the adaptation layer is fully removed in order to obtain a relaxed thin layer
of the second semiconductor material having a high quality surface.
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