| US 7,510,933 B2 | ||
| Fabrication method of semiconductor integrated circuit device | ||
| Osamu Takahashi, Eniwa (Japan); and Kunio Ogasawara, Chitose (Japan) | ||
| Assigned to Renesas Technology Corp., Tokyo (Japan) | ||
| Filed on May 23, 2007, as Appl. No. 11/802,451. | ||
| Application 11/802451 is a continuation of application No. 11/062615, filed on Feb. 22, 2005, granted, now 7,253,011. | ||
| Application 11/062615 is a continuation of application No. 10/868838, filed on Jun. 17, 2004, abandoned. | ||
| Application 10/868838 is a continuation of application No. 10/266769, filed on Oct. 09, 2002, abandoned. | ||
| Claims priority of application No. 2001-335371 (JP), filed on Oct. 31, 2001. | ||
| Prior Publication US 2007/0287241 A1, Dec. 13, 2007 | ||
| Int. Cl. H01L 21/8247 (2006.01) | ||
| U.S. Cl. 438—257 [257/E21.179; 438/753] | 8 Claims |
| 1. A method of fabrication of a semiconductor integrated circuit device, comprising the steps of:
(a) introducing first water into a first water purifying system, and sending out first purified water from said first water
purifying system;
(b) introducing said first purified water into a second water purifying system having a pure water circulating loop including
an ultrafiltration filter having a hollow fiber type ultrafiltration membrane; and sending out second purified water from
a first supply point on said pure water circulating loop;
(c) providing a first wet treatment apparatus with said second purified water, thereby carrying out a first wet treatment
to a wafer in said first wet treatment apparatus,
wherein step (c) including the sub-steps of:
(c1) removing ions from said second purified water through use of an ion removing filter, at least capable of removing cations,
disposed between said first supply point and a use point in said first wet treatment apparatus, and
(c2) providing said use point with said second purified water which has passed through said ion removing filter,
and wherein
(i) said ion removing filter is a membrane type ion filter having a membrane sheet as a filter member;
(ii) said semiconductor integrated circuit device has a flash memory cell; and
(iii) said first wet treatment is a cleaning treatment prior to a thermal treatment for forming a gate insulating film of
said flash memory cell.
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